IRHI7460SE_15 Datasheet, PDF (1/4 Pages) International Rectifier – Simple Drive Requirements

Provisional Data Sheet No. PD-9.1224A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET^® TRANSISTOR
IRHI7460SE
N-CHANNEL
SINGLE EVENT EFFECT (SEE) RAD HARD
500 Volt, 0.32Ω, (SEE) RAD HARD HEXFET
International Rectifier’s (SEE) RAD HARD technol-
ogy HEXFETs demonstrate virtual immunity to SEE
failure. Additionally, under identical pre- and post-ra-
diation test conditions, International Rectifier’s RAD
HARD HEXFETs retain identical electrical specifica-
tions up to 1 x 10⁵ Rads (Si) total dose. No compen-
sation in gate drive circuitry is required. These devices
are also capable of surviving transient ionization
pulses as high as 1 x 10¹² Rads (Si)/Sec, and return
to normal operation within a few microseconds. Since
the SEE process utilizes International Rectifier’s pat-
ented HEXFET technology, the user can expect the
highest quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high-energy pulse circuits
in space and weapons environments.
Product Summary
Part Number BVDSS
IRHI7460SE
500V
RDS(on)
0.32Ω
ID
20A
Features:
s Radiation Hardened up to 1 x 10⁵ Rads (Si)
s Single Event Burnout (SEB) Hardened
s Single Event Gate Rupture (SEGR) Hardened
s Gamma Dot (Flash X-Ray) Hardened
s Neutron Tolerant
s Identical Pre- and Post-Electrical Test Conditions
s Repetitive Avalanche Rating
s Dynamic dv/dt Rating
s Simple Drive Requirements
s Ease of Paralleling
s Hermetically Sealed
s Electrically Isolated
s Ceramic Eyelets
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current Œ
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy 
Avalanche Current Œ
Repetitive Avalanche Energy Œ
Peak Diode Recovery dv/dt Ž
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Radiation
IRHI7460SE
20
12
Units
A
80
300
W
2.4
W/K 
±20
V
500
mJ
20
A
30
mJ
3.5
-55 to 150
V/ns
300 (0.063 in. (1.6mm) from
o_C
case for 10 sec.)
10.9 (typical)
g