IRHG9110_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

PD-93819C
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (MO-036AB)
IRHG9110
100V, QUAD P-CHANNEL
RAD-Hard^™ HEXFET^®
MOSFET TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
IRHG9110 100K Rads (Si) 1.1Ω
IRHG93110 300K Rads (Si) 1.1Ω
ID
-0.75A
-0.75A
International Rectifier’s RAD-Hard^TM HEXFET^® MOSFET
Technology provides high performance power MOSFETs
for space applications. This technology has over a decade
of proven performance and reliability in satellite
applications. These devices have been characterized for
both Total Dose and Single Event Effects (SEE). The
combination of low RDS(ON) and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain all
of the well established advantages of MOSFETs such as
voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
MO-036AB
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
-0.75
-0.5
Units
A
-3.0
1.4
W
0.011
W/°C
±20
V
75
mJ
-1.0
A
0.14
2.4 Â
-55 to 150
mJ
V/ns
°C
300 (0.63in./1.6mm from case for 10s)
1.3 (Typical)
g
For footnotes refer to the last page
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1
03/17/14