IRHG9110 Datasheet, PDF (1/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB)

PD - 93819B
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (MO-036AB)
IRHG9110
100V, QUAD P-CHANNEL
RAD-Hard^™ HEXFET^®
MOSFET TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
IRHG9110 100K Rads (Si) 1.1Ω
IRHG93110 300K Rads (Si) 1.1Ω
ID
-0.75A
-0.75A
International Rectifier’s RAD-Hard^TM HEXFET^® MOSFET
Technology provides high performance power MOSFETs
for space applications. This technology has over a decade
of proven performance and reliability in satellite applica-
tions. These devices have been characterized for both
Total Dose and Single Event Effects (SEE). The combina-
tion of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC con-
verters and motor control. These devices retain all of the
well established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and tempera-
ture stability of electrical parameters.
MO-036AB
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
www.irf.com
Pre-Irradiation
-0.75
-0.5
Units
A
-3.0
1.4
W
0.011
±20
W/°C
V
75
mJ
-0.75
A
0.14
2.4 ➂
-55 to 150
mJ
V/ns
o_C
300 (0.63in./1.6mm from case for 10s)
1.3 (Typical)
g
1
02/20/03