IRHG7214 Datasheet, PDF (1/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET THRU-HOLE

PD - 91711B
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (MO-036AB)
IRHG7214
250V,QUAD N-CHANNEL
RAD Hard^™ HEXFET^® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
IRHG7214
100K Rads (Si) 2.25Ω
IRHG3214
300K Rads (Si) 2.25Ω
IRHG4214
600K Rads (Si) 2.25Ω
IRHG8214 1000K Rads (Si) 2.25Ω
ID
0.5A
0.5A
0.5A
0.5A
International Rectifier’s RADHard HEXFET^® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
MO-036AB
Features:
! Single Event Effect (SEE) Hardened
! Low RDS(on)
! Low Total Gate Charge
! Proton Tolerant
! Simple Drive Requirements
! Ease of Paralleling
! Hermetically Sealed
! Ceramic Package
! Light Weight
Pre-Irradiation
Units
0.5
0.3
A
2.0
1.4
W
0.011
W/°C
±20
V
75
mJ
—
A
—
mJ
5.5
-55 to 150
V/ns
o_C
300 (1.6mm from case for 10s)
1.5 (Typical )
g
For footnotes refer to the last page
www.irf.com
1
8/14/01