IRHG7110 Datasheet, PDF (1/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB)

PD - 90670C
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (MO-036AB)
Product Summary
Part Number Radiation Level RDS(on)
IRHG7110 100K Rads (Si) 0.6Ω
IRHG3110 300K Rads (Si) 0.6Ω
IRHG4110 600K Rads (Si) 0.6Ω
IRHG8110 1000K Rads (Si) 0.6Ω
ID
1.0A
1.0A
1.0A
1.0A
International Rectifier’s RAD-Hard^TM HEXFET^® MOSFET
Technology provides high performance power MOSFETs
for space applications. This technology has over a decade
of proven performance and reliability in satellite applica-
tions. These devices have been characterized for both
Total Dose and Single Event Effects (SEE). The combina-
tion of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC con-
verters and motor control. These devices retain all of the
well established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and tempera-
ture stability of electrical parameters.
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
www.irf.com
IRHG7110
100V, QUAD N-CHANNEL
RAD-Hard^™ HEXFET^®
MOSFET TECHNOLOGY
MO-036AB
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Pre-Irradiation
Units
1.0
0.6
A
4.0
1.4
W
0.011
W/°C
±20
V
56
mJ
1.0
A
0.14
mJ
2.4
-55 to 150
V/ns
o_C
300 (0.63in./1.6mm from case for 10s)
1.3 (Typical)
g
1
07/17/01