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IRHG6110 Datasheet, PDF (1/14 Pages) International Rectifier – 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY | |||
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PD - 93783E
IRHG6110
RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL
POWER MOSFET
RAD-Hard⢠HEXFET®
THRU-HOLE (MO-036AB)
MOSFET TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
IRHG6110 100K Rads (Si) 0.6â¦
IRHG63110 300K Rads (Si) 0.6â¦
IRHG6110 100K Rads (Si) 1.1â¦
IRHG63110 300K Rads (Si) 1.1â¦
ID
1.0A
1.0A
-0.75A
-0.75A
CHANNEL
N
N
P
P
MO-036AB
International Rectifierâs RAD-HardTM HEXFET® MOSFET
Technology provides high performance power MOSFETs
for space applications. This technology has over a decade
of proven performance and reliability in satellite applica-
tions. These devices have been characterized for both
Total Dose and Single Event Effects (SEE). The combina-
tion of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC con-
verters and motor control. These devices retain all of the
well established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and tempera-
ture stability of electrical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS =± 12V, TC = 25°C Continuous Drain Current
ID @ VGS =± 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current â
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current â
Repetitive Avalanche Energy â
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
N-Channel
P-Channel
1.0
-0.75
0.6
-0.5
4.0
-3.0
1.4
1.4
0.011
0.011
±20
±20
56 â
75 ~
1.0
-0.75
0.14
0.14
2.4 â
2.4
-55 to 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
300 (0.63 in./1.6 mm from case for 10s)
1.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
07/17/01
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