IRHG57110_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

PD-94432C
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (MO-036)
Product Summary
Part Number Radiation Level RDS(on)
IRHG57110 100K Rads (Si) 0.29Ω
IRHG53110 300K Rads (Si) 0.29Ω
IRHG54110 500K Rads (Si) 0.29Ω
IRHG58110 1000K Rads (Si) 0.31Ω
ID
1.6A
1.6A
1.6A
1.6A
IRHG57110
100V, Quad N-CHANNEL
5_ ^TECHNOLOGY
MO-036AB
International Rectifier’s R5^TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm²)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
n ESD Rating: Class 1A per MIL-STD-750,
Method 1020
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current 
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt ƒ
TJ
Operating Junction
TSTG
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
1.6
1.0
A
6.4
1.4
W
0.011
W/°C
± 20
V
130
mJ
1.6
A
0.14
mJ
6.5
-55 to 150
V/ns
°C
300 (0.63 in./1.6 mm from case for 10s)
1.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
07/07/15