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IRHG567110_15 Datasheet, PDF (1/14 Pages) International Rectifier – Simple Drive Requirements
PD-94246C
IRHG567110
RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL
POWER MOSFET
THRU-HOLE (MO-036AB)
RAD-Hard™ HEXFET®
5 TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
IRHG567110 100K Rads (Si) 0.29Ω
IRHG563110 300K Rads (Si) 0.29Ω
IRHG567110 100K Rads (Si) 0.96Ω
IRHG563110 300K Rads (Si) 0.96Ω
ID CHANNEL
1.6A
N
1.6A
N
-0.96A P
-0.96A P
MO-036AB
International Rectifier’s RAD-HardTM HEXFET® MOSFET
Technology provides high performance power MOSFETs
for space applications. This technology has over a decade
of proven performance and reliability in satellite
applications. These devices have been characterized for
both Total Dose and Single Event Effects (SEE). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain all
of the well established advantages of MOSFETs such as
voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS =± 12V, TC = 25°C Continuous Drain Current
ID @ VGS =± 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current 
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
n ESD Rating: Class 1A per MIL-STD-750,
Method 1020
Pre-Irradiation
N-Channel
P-Channel
1.6
-0.96
1.0
-0.6
6.4
-3.84
1.4
1.4
0.011
0.011
± 20
± 20
130 ‚
200 ‡
1.6
-0.96
0.14
0.14
6.5 ƒ
7.1 ˆ
-55 to 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (0.63 in./1.6 mm from case for 10s)
1.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
07/07/15