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IRHG567110 Datasheet, PDF (1/14 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET THRU-HOLE 100V, Combination 2N-2P-CHANNEL | |||
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PD - 94246B
IRHG567110
RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL
POWER MOSFET
THRU-HOLE (MO-036AB)
RAD-Hard⢠HEXFET®
4# TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
IRHG567110 100K Rads (Si) 0.29â¦
IRHG563110 300K Rads (Si) 0.29â¦
IRHG567110 100K Rads (Si) 0.96â¦
IRHG563110 300K Rads (Si) 0.96â¦
ID
1.6A
1.6A
-0.96A
-0.96A
CHANNEL
N
N
P
P
MO-036AB
International Rectifierâs RAD-HardTM HEXFET® MOSFET
Technology provides high performance power MOSFETs
for space applications. This technology has over a decade
of proven performance and reliability in satellite applica-
tions. These devices have been characterized for both
Total Dose and Single Event Effects (SEE). The combina-
tion of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC con-
verters and motor control. These devices retain all of the
well established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and tempera-
ture stability of electrical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS =± 12V, TC = 25°C Continuous Drain Current
ID @ VGS =± 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current â
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current â
Repetitive Avalanche Energy â
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
N-Channel
P-Channel
1.6
-0.96
1.0
-0.6
6.4
-3.84
1.4
1.4
0.011
0.011
±20
±20
130 â
200 â¦
1.6
-0.96
0.14
0.14
6.5 â
7.1 â§
-55 to 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
300 (0.63 in./1.6 mm from case for 10s)
1.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
09/05/02
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