IRHF7130_15 Datasheet, PDF (1/12 Pages) International Rectifier – Simple Drive Requirements

PD - 90653F
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level
IRHF7130 100K Rads (Si)
IRHF3130 300K Rads (Si)
IRHF4130 500K Rads (Si)
IRHF8130 1000K Rads (Si)
RDS(on)
0.18Ω
0.18Ω
0.18Ω
0.18Ω
IRHF7130
JANSR2N7261
100V, N-CHANNEL
REF: MIL-PRF-19500/601
RAD Hard^™ HEXFET^® TECHNOLOGY
ID
8.0A
8.0A
8.0A
8.0A
QPL Part Number
JANSR2N7261
JANSF2N7261
JANSG2N7261
JANSH2N7261
International Rectifier’s RADHard HEXFET^® technology
provides high performance power MOSFETs for
space applications. This technology has over a
decade of proven performance and reliability in
satellite applications. These devices have been
characterized for both Total Dose and Single Event
Effects (SEE). The combination of low Rdson and
low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
TO-39
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
8.0
5.0
32
25
0.20
A
W
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy Á
130
mJ
IAR
Avalanche Current À
8.0
A
EAR
Repetitive Avalanche Energy À
2.5
mJ
dv/dt
Peak Diode Recovery dv/dt Â
5.5
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
-55 to 150
o_C
300 (0.063 in.(1.6mm) from case for 10s)
Weight
0.98 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
04/28/06