IRHF597130_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

PD-96963
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level
IRHF597130 100K Rads (Si)
IRHF593130 300K Rads (Si)
RDS(on)
0.24Ω
0.24Ω
ID
-6.7A
-6.7A
IRHF597130
100V, P-CHANNEL
5 TECHNOLOGY
™
TO-39
International Rectifier’s R5^TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm²)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC=25°C
ID @ VGS = -12V, TC=100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
-6.7
-4.3
A
-26.8
25
W
0.2
W/°C
±20
V
240
mJ
-6.7
A
2.5
mJ
-17
-55 to 150
V/ns
o_C
300 (0.063 in./1.6 mm from case for 10s)
0.98 (Typical )
g
For footnotes refer to the last page
www.irf.com
1
09/26/05