IRHF57133SE_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

PD - 94334B
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
IRHF57133SE
JANSR2N7497T2
130V, N-CHANNEL
REF: MIL-PRF-19500/706
5 TECHNOLOGY
™
Product Summary
Part Number Radiation Level RDS(on)
IRHF57133SE 100K Rads (Si) 0.1Ω
ID
10.5A
QPL Part Number
JANSR2N7497T2
International Rectifier’s R5^TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm²)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
TO-39
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Ratings
n Dynamic dv/dt Ratings
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
10.5
6.5
A
42
25
W
0.2
W/°C
±20
V
164
mJ
10.5
A
2.5
mJ
8.0
-55 to 150
V/ns
o_C
300 (0.063 in./1.6mm from case for 10s)
0.98 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
06/16/04