IRHF57130_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

PD-93789F
IRHF57130
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level
IRHF57130 100K Rads (Si)
IRHF53130 300K Rads (Si)
IRHF54130 500K Rads (Si)
IRHF58130 1000K Rads (Si)
RDS(on)
0.08Ω
0.08Ω
0.08Ω
0.10Ω
JANSR2N7493T2
100V, N-CHANNEL
ID QPL Part Number
11.7A JANSR2N7493T2
11.7A JANSF2N7493T2
11.7A JANSG2N7493T2
11.7A JANSH2N7493T2
REF: MIL-PRF-19500/701
5 TECHNOLOGY
™
TO-39
International Rectifier’s R5^TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm²)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Identical Pre- & Post-Electrical Test Conditions
n Repetitive Avalanche Ratings
n Dynamic dv/dt Ratings
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
11.7
7.4
A
47
25
W
0.2
W/°C
±20
V
173
mJ
11.7
A
2.5
mJ
4.9
-55 to 150
V/ns
o_C
300 (0.063 in./1.6mm from case for 10s)
0.98 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
10/27/11