IRHF57130 Datasheet, PDF (1/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)

PD - 93789A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level
IRHF57130 100K Rads (Si)
IRHF53130 300K Rads (Si)
IRHF54130 600K Rads (Si)
IRHF58130 1000K Rads (Si)
RDS(on)
0.08Ω
0.08Ω
0.08Ω
0.10Ω
ID
11.7A
11.7A
11.7A
11.7A
IRHF57130
100V, N-CHANNEL
R5 TECHNOLOGY
™
TO-39
International Rectifier’s R5^TM technology provides _Features:
high performance power MOSFETs for space appli- _{n Single Event Effect (SEE) Hardened}
cations. These devices have been characterized for _{n Ultra Low RDS(on)}
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm²)). The combination
n
n
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
of low RDS(on) and low gate charge reduces the power _{n Repetitive Avalanche Ratings}
losses in switching applications such as DC to DC _{n Dynamic dv/dt Ratings}
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
n
n
n
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
eters.
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current Œ
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy 
Avalanche Current Œ
Repetitive Avalanche Energy Œ
Peak Diode Recovery dv/dt Ž
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
11.7
7.4
A
47
25
W
0.2
W/°C
±20
V
173
mJ
11.7
A
2.5
mJ
4.9
-55 to 150
V/ns
o_C
300 (0.063 in./1.6mm from case for 10s)
0.98 (Typical)
g
For footnotes refer to the last page
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