IRHF57034_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

PD-93791D
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level RDS(on)
IRHF57034 100K Rads (Si) 0.048Ω
IRHF53034 300K Rads (Si) 0.048Ω
IRHF54034 500K Rads (Si) 0.048Ω
IRHF58034 1000K Rads (Si) 0.060Ω
IRHF57034
JANSR2N7492T2
60V, N-CHANNEL
REF: MIL-PRF-19500/701
5 TECHNOLOGY
™
ID QPL Part Number
12A* JANSR2N7492T2
12A* JANSF2N7492T2
12A* JANSG2N7492T2
12A* JANSH2N7492T2
International Rectifier’s R5^TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm²)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
TO-39
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Ratings
n Dynamic dv/dt Ratings
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
12*
9.5
A
48
25
W
0.2
W/°C
±20
V
270
mJ
12
A
2.5
mJ
9.6
V/ns
-55 to 150
°C
300 ( 0.063 in./1.6mm from case for 10s)
0.98 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
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1
10/19/11