IRHE9230_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-18)
PD - 91804E
IRHE9230
200V, P-CHANNEL
REF: MIL-PRF-19500/630
RAD-Hard^™ HEXFET^®
MOSFET TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHE9230 100K Rads (Si)
IRHE93230 300K Rads (Si)
RDS(on)
0.80Ω
0.80Ω
ID QPL Part Number
-4.0A JANSR2N7390U
-4.0A JANSF2N7390U
International Rectifier’s RAD-Hard^TM HEXFET^® MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low Rdson and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
LCC - 18
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
Pre-Irradiation
Units
-4.0
-2.4
A
-16
25
W
0.2
W/°C
±20
V
171
mJ
-4.0
A
2.5
mJ
-27
V/ns
-55 to 150
o_C
300 ( for 5s)
0.42 (Typical)
g
For footnotes refer to the last page
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1
2/20/02