IRHE9130_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-18)
PD-90881D
IRHE9130
JANSR2N7389U
100V, P-CHANNEL
REF: MIL-PRF-19500/630
RAD-Hard^™ HEXFET^®
MOSFET TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHE9130 100K Rads (Si)
IRHE93130 300K Rads (Si)
RDS(on)
0.30Ω
0.30Ω
ID QPL Part Number
-6.5A JANSR2N7389U
-6.5A JANSF2N7389U
LCC-18
International Rectifier’s RAD-Hard^TM HEXFET^®
MOSFET technology provides high performance
power MOSFETs for space applications. This
technology has over a decade of proven performance
and reliability in satellite applications. These devices
have been characterized for both Total Dose and
Single Event Effects (SEE). The combination of low
Rdson and low gate charge reduces the power losses
in switching applications such as DC to DC converters
and motor control. These devices retain all of the
well established advantages of MOSFETs such as
voltage control, fast switching, ease of paralleling
and temperature stability of electrical parameters.
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
n ESD Rating: Class 1B per MIL-STD-750,
Method 1020
Pre-Irradiation
Units
-6.5
-4.1
A
-26
25
W
0.2
W/°C
±20
V
165
mJ
-6.5
A
2.5
mJ
-22
V/ns
-55 to 150
°C
300 (for 5s)
0.42 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
09/04/14