IRHE7230_15 Datasheet, PDF (1/12 Pages) International Rectifier – Simple Drive Requirements

PD - 90713F
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-18)
IRHE7230
JANSR2N7262U
200V, N-CHANNEL
REF: MIL-PRF-19500/601
RAD-Hard^™ HEXFET^® TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHE7230 100K Rads (Si)
IRHE3230 300K Rads (Si)
IRHE4230 500K Rads (Si)
IRHE8230 1000K Rads (Si)
RDS(on)
0.35Ω
0.35Ω
0.35Ω
0.35Ω
ID
5.5A
5.5A
5.5A
5.5A
QPL Part Number
JANSR2N7262U
JANSF2N7262U
JANSG2N7262U
JANSH2N7262U
International Rectifier’s RAD-Hard^TM HEXFET^®
technology provides high performance power
MOSFETs for space applications. This technology
has over a decade of proven performance and
reliability in satellite applications. These devices have
been characterized for both Total Dose and Single
Event Effects (SEE). The combination of low Rdson
and low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
LCC - 18
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Light Weight
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
www.irf.com
Pre-Irradiation
Units
5.5
3.5
A
22
25
W
0.2
W/°C
±20
V
240
mJ
5.5
A
2.5
mJ
5.0
V/ns
-55 to 150
o_C
300 ( for 5s)
0.42 (Typical)
g
1
05/15/06