IRHE7110_15 Datasheet, PDF (1/12 Pages) International Rectifier – Simple Drive Requirements

PD - 90732E
RADIATION HARDENED
IRHE7110
POWER MOSFET
100V, N-CHANNEL
SURFACE MOUNT(LCC-18) ^{RAD Hard™ HEXFET® TECHNOLOGY}
Product Summary
Part Number Radiation Level RDS(on)
IRHE7110
100K Rads (Si) 0.60Ω
IRHE3110
300K Rads (Si) 0.60Ω
IRHE4110
600K Rads (Si) 0.60Ω
IRHE8110 1000K Rads (Si) 0.60Ω
ID
3.5A
3.5A
3.5A
3.5A
LCC-18
International Rectifier’s RADHard HEXFET^® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
3.5
2.2
A
14
15
W
0.12
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
±20
68
—
—
5.5
-55 to 150
V
mJ
A
mJ
V/ns
o_C
Package Mounting Surface Temperature
300 ( for 5s)
Weight
0.42 (Typical )
g
For footnotes refer to the last page
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1
04/15/02