IRHE57Z30_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

PD - 93863E
IRHE57Z30
RADIATION HARDENED
JANSR2N7494U5
POWER MOSFET
30V, N-CHANNEL
SURFACE MOUNT (LCC-18)
Product Summary
REF: MIL-PRF-19500/700
5 TECHNOLOGY
™
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHE57Z30 100K Rads (Si) 0.07Ω 12A* JANSR2N7494U5
IRHE53Z30 300K Rads (Si) 0.07Ω 12A* JANSF2N7494U5
IRHE54Z30 500K Rads (Si) 0.07Ω 12A* JANSG2N7494U5
IRHE58Z30 1000K Rads (Si) 0.07Ω 12A* JANSH2N7494U5
International Rectifier’s R5^TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm²)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
LCC-18
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Pre-Irradiation
Units
12*
8.0
A
48
25
W
0.2
W/°C
±20
V
156
mJ
12
A
2.5
mJ
2.3
V/ns
-55 to 150
o_C
300 (for 5s)
0.42 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
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1
04/26/06