IRHE57034 Datasheet, PDF (1/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)

PD - 94239E
IRHE57034
RADIATION HARDENED
JANSR2N7495U5
POWER MOSFET
60V, N-CHANNEL
SURFACE MOUNT (LCC-18)
Product Summary
REF: MIL-PRF-19500/700
5 TECHNOLOGY
™
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHE57034 100K Rads (Si) 0.08Ω 11.7A JANSR2N7495U5
IRHE53034 300K Rads (Si) 0.08Ω 11.7A JANSF2N7495U5
IRHE54034 500K Rads (Si) 0.08Ω 11.7A JANSG2N7495U5
IRHE58034 1000K Rads (Si) 0.1Ω 11.7A JANSH2N7495U5
LCC-18
International Rectifier’s R5^TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm²)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Pre-Irradiation
Units
11.7
7.4
A
46.8
25
W
0.2
W/°C
±20
V
87
mJ
11.7
A
2.5
mJ
3.4
-55 to 150
V/ns
o_C
300 (for 5s)
0.42 (Typical)
g
For footnotes refer to the last page
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1
04/27/06