IRH9250_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

PD-91392D
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (T0-204AE)
IRH9250
200V, P-CHANNEL
RAD Hard^™ HEXFET^® TECHNOLOGY
Product Summary
Part Number Radiation Level
IRH9250
100K Rads (Si)
IRH93250
300K Rads (Si)
RDS(on)
0.315Ω
0.315Ω
ID
-14A
-14A
International Rectifier’s RADHard HEXFET^®
technology provides high performance power
MOSFETs for space applications. This technology
has over a decade of proven performance and
reliability in satellite applications. These devices
have been characterized for both Total Dose and
Single Event Effects (SEE). The combination of
low Rdson and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
TO-204AE
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
-14
-9.0
A
-56
150
W
1.2
W/°C
VGS
Gate-to-Source Voltage
±20
EAS
Single Pulse Avalanche Energy Á
500
IAR
Avalanche Current À
-14
EAR
Repetitive Avalanche Energy À
15
dv/dt
Peak Diode Recovery dv/dt Â
-41
V
mJ
A
mJ
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
-55 to 150
°C
300 (0.063 in.(1.6mm) from case for 10s)
Weight
11.5 (Typical )
g
For footnotes refer to the last page
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1
05/13/14