IRH9150_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

PD-90879D
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (T0-204AE)
IRH9150
100V, P-CHANNEL
RAD Hard^™ HEXFET^® TECHNOLOGY
Product Summary
Part Number Radiation Level
IRH9150
100K Rads (Si)
IRH93150
300K Rads (Si)
RDS(on)
0.075Ω
0.075Ω
ID
-22A
-22A
International Rectifier’s RADHard HEXFET^® technology
provides high performance power MOSFETs for space
applications. This technology has over a decade of
proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications such
as DC to DC converters and motor control. These
devices retain all of the well established advantages of
MOSFETs such as voltage control, fast switching, ease
of paralleling and temperature stability of electrical
parameters.
TO-204AE
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
-22
-14
A
-88
150
W
1.2
W/°C
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
± 20
500
-22
1.5
-23
V
mJ
A
mJ
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
-55 to 150
°C
300 ( 0.063 in.(1.6mm) from case for 10s)
Weight
11.5 (Typical )
g
For footnotes refer to the last page
www.irf.com
1
05/13/14