IRH7450SE Datasheet, PDF (1/4 Pages) International Rectifier – TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.51ohm, Id=11A)

Previous Datasheet
Index
Next Data Sheet
Provisional Data Sheet No. PD 9.1390
REPETITIVE AVALANCHE AND dv/dt RATED
IRH7450SE
HEXFET^® TRANSISTOR
N-CHANNEL
SINGLE EVENT EFFECT (SEE) RAD HARD
500 Volt, 0.51Ω, (SEE) RAD HARD HEXFET
International Rectifier’s (SEE) RAD HARD technology
HEXFETs demonstrate virtual immunity to SEE fail-
ure. Additionally, under identical pre- and post-radia-
tion test conditions, International Rectifier’s RAD HARD
HEXFETs retain identical electrical specifications up
to 1 x 10⁵ Rads (Si) total dose. No compensation in
gate drive circuitry is required.These devices are also
capable of surviving transient ionization pulses as high
as 1 x 10¹² Rads (Si)/Sec, and return to normal opera-
tion within a few microseconds. Since the (SEE) pro-
cess utilizes International Rectifier’s patented HEXFET
technology, the user can expect the highest quality and
reliability in the industry.
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters.
They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high-energy pulse circuits
in space and weapons environments.
Product Summary
Part Number
BV DSS
IRH7450SE
500V
RDS(on)
ID
0.51Ω 11A
Features:
n Radiation Hardened up to 1 x 10⁵ Rads (Si)
n Single Event Burnout (SEB) Hardened
n Single Event Gate Rupture (SEGR) Hardened
n Gamma Dot (Flash X-Ray) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Rating
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
Absolute Maximum Ratings
Pre-Radiation
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
IRH7450SE
Units
Continuous Drain Current
Continuous Drain Current
11
7.0
A
Pulsed Drain Current 
44
Max. Power Dissipation
150
W
Linear Derating Factor
1.2
W/K …
Gate-to-Source Voltage
±20
V
Single Pulse Avalanche Energy ‚
500
mJ
Avalanche Current 
11
A
Repetitive Avalanche Energy 
15
mJ
Peak Diode Recovery dv/dt ƒ
3.5
V/ns
Operating Junction
Storage Temperature Range
-55 to 150
o_C
Lead Temperature
300 (0.0063 in. (1.6mm) from case for 10 sec.)
Weight
11.5 (typical)
g
To Order