IRH7250_15 Datasheet, PDF (1/12 Pages) International Rectifier – Simple Drive Requirements

PD - 90697E
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (T0-204AA/AE)
IRH7250
200V, N-CHANNEL
RAD Hard^™ HEXFET^® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on) I D
IRH7250
100K Rads (Si) 0.11Ω 26A
IRH3250
300K Rads (Si) 0.11Ω 26A
IRH4250
600K Rads (Si) 0.11Ω 26A
IRH8250
1000K Rads (Si) 0.11Ω 26A
TO-204AE
International Rectifier’s RADHard HEXFET^® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
26
16
A
104
150
W
1.2
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy ➁
500
mJ
IAR
Avalanche Current ➀
26
A
EAR
Repetitive Avalanche Energy ➀
15
mJ
dv/dt
Peak Diode Recovery dv/dt ➂
5.0
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
-55 to 150
o_C
300 ( 0.063 in.(1.6mm) from case for 10s)
Weight
11.5 (Typical )
g
For footnotes refer to the last page
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1
12/04/02