IRH7250 Datasheet, PDF (1/12 Pages) International Rectifier – REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR

PD - 90697B
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET^® TRANSISTOR
IRH7250
IRH8250
N CHANNEL
MEGA HARD RAD
200Volt, 0.11Ω, MEGA RAD HARD HEXFET Product Summary
International Rectifier’s RAD HARD technology
HEXFETs demonstrate excellent threshold voltage
stability and breakdown voltage stability at total
radiaition doses as high as 1x10⁶ Rads(Si). Under
identical pre- and post-irradiation test conditions, In-
ternational Rectifier’s RAD HARD HEXFETs retain
identical electrical specifications up to 1 x 10⁵ Rads
(Si) total dose. No compensation in gate drive circuitry
is required. These devices are also capable of surviv-
ing transient ionization pulses as high as 1 x 10¹² Rads
(Si)/Sec, and return to normal operation within a few
microseconds. Since the RAD HARD process utilizes
International Rectifier’s patented HEXFET technology,
the user can expect the highest quality and reliability
in the industry.
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters. They are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy
pulse circuits in space and weapons environments.
Absolute Maximum Ratings 
Part Number
IRH7250
IRH8250
BVDSS
200V
200V
RDS(on)
ID
0.11Ω 26A
0.11Ω 26A
Features:
n Radiation Hardened up to 1 x 10⁶ Rads (Si)
n Single Event Burnout (SEB) Hardened
n Single Event Gate Rupture (SEGR) Hardened
n Gamma Dot (Flash X-Ray) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Rating
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
Pre-Irradiation
Parameter
IRH7250, IRH8250
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ‚
Max. Power Dissipation
Linear Derating Factor
26
16
A
104
150
W
1.2
W/°C
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ƒ
Avalanche Current ‚
Repetitive Avalanche Energy‚
Peak Diode Recovery dv/dt „
±20
500
26
15
5.0
V
mJ
A
mJ
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
-55 to 150
o_C
300 (0.063 in. (1.6mm) from case for 10s)
Weight
11.5 (typical)
g
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1
10/14/98