IRH7150 Datasheet, PDF (1/12 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204)

PD - 90677D
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (T0-204)
IRH7150
100V, N-CHANNEL
RAD Hard^™ HEXFET^® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on) ID
IRH7150 100K Rads (Si) 0.065Ω 34A
IRH3150 300K Rads (Si) 0.065Ω 34A
IRH4150 600K Rads (Si) 0.065Ω 34A
IRH8150 1000K Rads (Si) 0.065Ω 34A
TO-204AE
International Rectifier’s RADHard HEXFET^® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
34
21
A
136
150
W
1.2
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
±20
500
34
15
5.5
-55 to 150
300 ( 0.063 in.(1.6mm) from case for 10s)
11.5 (Typical )
V
mJ
A
mJ
V/ns
o_C
g
For footnotes refer to the last page
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1
03/21/01