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IRGS8B60K Datasheet, PDF (1/13 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR | |||
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INSULATED GATE BIPOLAR TRANSISTOR
Features
⢠Low VCE (on) Non Punch Through IGBT Technology.
⢠10µs Short Circuit Capability.
⢠Square RBSOA.
⢠Positive VCE (on) Temperature Coefficient.
Benefits
⢠Benchmark Efficiency for Motor Control.
⢠Rugged Transient Performance.
⢠Low EMI.
⢠Excellent Current Sharing in Parallel Operation.
C
G
E
n-channel
PD - 94545C
IRGB8B60K
IRGS8B60K
IRGSL8B60K
VCES = 600V
IC = 20A, TC=100°C
tsc>10µs, TJ=150°C
VCE(on) typ. = 1.8V
TO-220AB
IRGB8B60K
D2Pak
IRGS8B60K
TO-262
IRGSL8B60K
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C Continuous Collector Current
ICM
ILM
Pulse Collector Current (Ref.Fig.C.T.5)
c Clamped Inductive Load current
VGE
Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ
Operating Junction and
TSTG
Storage Temperature Range
Storage Temperature Range, for 10 sec.
Max.
600
28
19
56
56
±20
167
83
-55 to +175
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
Thermal / Mechanical Characteristics
Parameter
RθJC
Junction-to-Case- IGBT
RθCS
RθJA
RθJA
Case-to-Sink, flat, greased surface
d Junction-to-Ambient, typical socket mount
e Junction-to-Ambient (PCB Mount, Steady State)
Weight
www.irf.com
Min.
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
0.50
âââ
âââ
1.44
Max.
0.90
âââ
62
40
âââ
Units
°C/W
g
1
10/16/03
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