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IRGS6B60KDPBF Datasheet, PDF (1/15 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |||
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PD - 95229C
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
IRGB6B60KDPbF
IRGS6B60KDPbF
IRGSL6B60KDPbF
Features
⢠Low VCE (on) Non Punch Through IGBT Technology.
⢠Low Diode VF.
⢠10μs Short Circuit Capability.
⢠Square RBSOA.
⢠Ultrasoft Diode Reverse Recovery Characteristics.
⢠Positive VCE (on) Temperature Coefficient.
⢠Lead-Free
C
G
E
n-channel
VCES = 600V
IC = 10A, TC=100°C
tsc > 10μs, TJ=150°C
VCE(on) typ. = 1.8V
Benefits
⢠Benchmark Efficiency for Motor Control.
⢠Rugged Transient Performance.
⢠Low EMI.
⢠Excellent Current Sharing in Parallel Operation.
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load CurrentÂ
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Thermal Resistance
TO-220AB
D2Pak
TO-262
IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF
Max.
600
18
10
26
26
18
10
26
± 20
90
36
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
RθJC
RθJC
RθCS
RθJA
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mountÂ
Junction-to-Ambient (PCB Mount, steady state)Â
Weight
Min.
âââ
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
0.50
âââ
âââ
1.44
Max.
1.4
4.4
âââ
62
40
âââ
Units
°C/W
g
1
01/07/13
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