IRGS4B60KD1PBF_15 Datasheet, PDF (1/16 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

PD - 95616A
IRGB4B60KD1PbF
IRGS4B60KD1PbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ^{IRGSL4B60KD1PbF}
ULTRAFAST SOFT RECOVERY DIODE
Features
C
V_CES = 600V
• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature rated at 175°C.
• Lead-Free
G
E
n-channel
I_C = 7.6A, T_C=100°C
t_sc > 10µs, T_J=150°C
V_CE(on) typ. = 2.1V
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
TO-220
D²Pak
TO-262
IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1
Absolute Maximum Ratings
Parameter
Max.
Units
V_CES
Collector-to-Emitter Voltage
I_C @ T_C = 25°C Continuous Collector Current
I_C @ T_C = 100°C Continuous Collector Current
I_CM
I_LM
Pulse Collector Current (Ref.Fig.C.T.5)
c Clamped Inductive Load current
I_F @ T_C = 25°C Diode Continuous Forward Current
I_F @ T_C = 100°C Diode Continuous Forward Current
I_FM
Diode Maximum Forward Current
V_GE
Gate-to-Emitter Voltage
P_D @ T_C = 25°C Maximum Power Dissipation
P_D @ T_C = 100°C Maximum Power Dissipation
T_J
Operating Junction and
T_STG
Storage Temperature Range
Storage Temperature Range, for 10 sec.
600
V
11
7.6
A
22
22
11
6.7
22
±20
V
63
W
31
-55 to +175
°C
300 (0.063 in. (1.6mm) from case)
Thermal / Mechanical Characteristics
Parameter
Min.
Typ.
Max. Units
R_θJC
R_θJC
R_θCS
Junction-to-Case- IGBT
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
–––
–––
2.4
°C/W
–––
–––
6.1
–––
0.50
–––
R_θJA
Junction-to-Ambient
–––
–––
62
R_θJA
d Junction-to-Ambient (PCB Mount, steady state)
–––
–––
40
Wt
Weight
–––
1.44
–––
g
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1
8/30/04