IRGS4715DPBF_15 Datasheet, PDF (1/12 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

V_CES = 650V
I_C = 15A, T_C =100°C
t_SC 5.5µs, T_J(max) = 175°C
V_CE(ON) typ. = 1.7V @ IC = 8A
Applications
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding
Features
Low V_CE(ON) and Switching Losses
5.5µs Short Circuit SOA
Square RBSOA
Maximum Junction Temperature 175°C
Positive V_{CE (ON)} Temperature Coefficient
Lead-Free, RoHs compliant
IRGB4715DPbF
IRGS4715DPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
C
G
E
n-channel
G ^CE
IRGS4715DPbF
D²â€Pak
E
C
G
IRGB4715DPbF
TO‐220AB
G
Gate
C
Collector
E
Emitter
Benefits
High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Increased Reliability
Excellent Current Sharing in Parallel Operation
Environmentally friendly
Base part number Package Type
Standard Pack
Orderable Part Number
IRGB4715DPbF
IRGS4715DPbF
TO-220
D²-Pak
Form
Tube
Tube
Tape and Reel Left
Tape and Reel Right
Quantity
50
50
800
800
IRGB4715DPbF
IRGS4715DPbF
IRGS4715DTRLPbF
IRGS4715DTRRPbF
Absolute Maximum Ratings
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
I_F @ T_C = 25°C
I_F @ T_C = 100°C
I_FM
V_GE
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, V_GE = 15V
Clamped Inductive Load Current, V_GE = 20V 
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current 
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
650
21
15
24
32
21
13
32
±30
100
50
-40 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
C
Thermal Resistance
Parameter
R_JC (IGBT)
R_JC (Diode)
R_CS
R_JA
R_JA
Thermal Resistance Junction-to-Case-(each IGBT) 
Thermal Resistance Junction-to-Case-(each Diode) 
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (TO-220)
Thermal Resistance, Junction-to-Ambient (D²-Pak)
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.5
–––
–––
Max.
1.5
3.6
–––
62
40
Units
°C/W
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November 12, 2014