IRGS4615DPBF Datasheet, PDF (1/12 Pages) International Rectifier – Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

IRGS4615DPbF
IRGB4615DPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
V_CES = 600V
I_C = 15A, T_C = 100°C
t_sc > 5µs, T_jmax = 175°C
V_{CE(on) typ.} = 1.55V @ 8A
Applications
• Appliance Drives
• Inverters
• UPS
C
G
E
n-channel
G
Gate
C
C
E
G
D²-Pak
IRGS4615DPbF
C
C o lle c to r
E
C
G
TO-220AB
IRGB4615DPbF
E
Em itter
Features
→
Benefits
Low V_CE(ON) and switching losses
High efficiency in a wide range of applications and switching frequencies
Square RBSOA and maximum junction temperature 175°C
Improved reliability due to rugged hard switching performance and higher
power capability
Positive V_CE(ON) temperature coefficient and tighter distribution of _{Excellent current sharing in parallel operation}
parameters
5μs short circuit SOA
Enables short circuit protection scheme
Lead-free, RoHS compliant
Environmentally friendly
Base part number
IRGS4615DPbF
IRGS4615DTRRPbF
IRGS4615DTRLPbF
IRGB4615DPbF
Package Type
D² PAK
TO-220AB
Standard Pack
Form
Tube
Tape and Reel Right
Tape and Reel Left
Tube
Quantity
50
800
800
50
Orderable Part Number
IRGS4615DPbF
IRGS4615DTRRPbF
IRGS4615DTRLPbF
IRGB4615DPbF
Absolute Maximum Ratings
Parameter
V_CES
Collector-to-Emitter Breakdown Voltage
I_C@ T_C = 25°C
Continuous Collector Current
I_C@ T_C = 100°C
I_CM
I_LM
Continuous Collector Current
c Pulsed Collector Current, V_GE = 15V
c Clamped Inductive Load Current, V_GE = 20V
I_F@T_C=25°C
Diode Continuous Forward Current
I_F@T_C=100°C
I_FM
V_GE
Diode Continuous Forward Current
d Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
P_D @ T_C =25°
Maximum Power Dissipation
P_D @ T_C =100°
Maximum Power Dissipation
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw TO-220
Max.
600
23
15
24
32
14
9
32
± 20
± 30
99
50
-40 to + 175
300
10lbf. In (1.1 N.m)
Units
V
A
V
W
°C
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October 25, 2013