IRGS4064DPBF_15 Datasheet, PDF (1/11 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low V_{CE (on)} Trench IGBT Technology
• Low Switching Losses
• Maximum Junction temperature 175 °C
• 5μs SCSOA
• Square RBSOA
• 100% of The Parts Tested for (I_LM)
• Positive V_{CE (on)} Temperature Coefficient.
• Ultra Fast Soft Recovery Co-pak Diode
• Tighter Distribution of Parameters
• Lead-Free Package
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due
to Low V_{CE (ON)} and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
• Low EMI
PD - 96424
IRGS4064DPbF
C
G
E
n-channel
V_CES = 600V
I_C = 10A, T_C = 100°C
t_sc > 5µs, T_jmax = 175°C
V_{CE(on) typ.} = 1.6V
C
G
Gate
E
C
G
D²Pak
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
V_CES
I_C@ T_C = 25°C
I_C@ T_C = 100°C
I_CM
I_LM
I_F@T_C=25°C
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
c Clamped Inductive Load Current
Diode Continuous Forward Current
I_F@T_C=100°C
I_FM
Diode Continuous Forward Current
d Diode Maximum Forward Current
V_GE
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
P_D @ T_C =25°
P_D @ T_C =100°
Maximum Power Dissipation
Maximum Power Dissipation
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R_θJC
R_θJC
e Junction-to-Case - IGBT
e Junction-to-Case - Diode
R_θCS
R_θJA
Case-to-Sink, flat, greased surface
e Junction-to-Ambient, typical socket mount
Wt
Weight
Max.
600
20
10
40
40
20
10
40
±20
±30
101
50
-55 to + 175
Units
V
A
V
W
°C
300 (0.063 in. (1.6mm) from case)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
1.5
Max.
1.49
3.66
–––
40
Units
°C/W
g
1
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02/16/12