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IRGS4064DPBF Datasheet, PDF (1/11 Pages) International Rectifier – Low Switching Losses Square RBSOA | |||
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INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
⢠Low VCE (on) Trench IGBT Technology
⢠Low Switching Losses
⢠Maximum Junction temperature 175 °C
⢠5μs SCSOA
⢠Square RBSOA
⢠100% of The Parts Tested for (ILM)
⢠Positive VCE (on) Temperature Coefficient.
⢠Ultra Fast Soft Recovery Co-pak Diode
⢠Tighter Distribution of Parameters
⢠Lead-Free Package
Benefits
⢠High Efficiency in a Wide Range of Applications
⢠Suitable for a Wide Range of Switching Frequencies due
to Low VCE (ON) and Low Switching Losses
⢠Rugged Transient Performance for Increased Reliability
⢠Excellent Current Sharing in Parallel Operation
⢠Low EMI
PD - 96424
IRGS4064DPbF
C
G
E
n-channel
VCES = 600V
IC = 10A, TC = 100°C
tsc > 5µs, Tjmax = 175°C
VCE(on) typ. = 1.6V
C
G
Gate
E
C
G
D2Pak
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
VCES
IC@ TC = 25°C
IC@ TC = 100°C
ICM
ILM
IF@TC=25°C
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
c Clamped Inductive Load Current
Diode Continuous Forward Current
IF@TC=100°C
IFM
Diode Continuous Forward Current
d Diode Maximum Forward Current
VGE
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
PD @ TC =25°
PD @ TC =100°
Maximum Power Dissipation
Maximum Power Dissipation
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
RθJC
e Junction-to-Case - IGBT
e Junction-to-Case - Diode
RθCS
RθJA
Case-to-Sink, flat, greased surface
e Junction-to-Ambient, typical socket mount
Wt
Weight
Max.
600
20
10
40
40
20
10
40
±20
±30
101
50
-55 to + 175
Units
V
A
V
W
°C
300 (0.063 in. (1.6mm) from case)
Min.
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
0.50
âââ
1.5
Max.
1.49
3.66
âââ
40
Units
°C/W
g
1
www.irf.com
02/16/12
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