IRGS4055PBF Datasheet, PDF (1/10 Pages) International Rectifier – PDP TRENCH 1GBT

PD - 97058B
PDP TRENCH IGBT _IRGB4055PbF
Features
l Advanced Trench IGBT Technology
l Optimized for Sustain and Energy Recovery
circuits in PDP applications
l Low V_CE(on) and Energy per Pulse (E_PULSETM)
for improved panel efficiency
l High repetitive peak current capability
l Lead Free package
IRGS4055PbF
Key Parameters
V_CE min
300
V
c ^{V CE(ON) typ. @ 110A}
I_RP max @ T_C= 25°C
1.70
270
V
A
T_J max
150
°C
C
C
C
G
E
n-channel
E
C
G
TO-220
IRGB4055DPbF
CE
G
D²Pak
IRGS4055DPbF
G
Gate
C
Collector
E
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes
advanced trench IGBT technology to achieve low V_CE(on) and low E_PULSETM rating per silicon area
which improve panel efficiency. Additional features are 150°C operating junction temperature and high
repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust
and reliable device for PDP applications.
Absolute Maximum Ratings
Parameter
V_GE
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_RP @ T_C = 25°C
P_D @T_C = 25°C
P_D @T_C = 100°C
Gate-to-Emitter Voltage
Continuous Collector Current, V_GE @ 15V
Continuous Collector, V_GE @ 15V
c Repetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
R_θJC
R_θCS
R_θJA
R_θJA
Parameter
d Junction-to-Case
Case-to-Sink, Flat Greased Surface , TO-220
d Junction-to-Ambient, TO-220
d Junction-to-Ambient (PCB Mount) , D²Pak
www.irf.com
Max.
±30
f 110
60
270
255
102
2.04
-40 to + 150
300
x x 10lb in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
0.50
–––
62
40
Units
V
A
W
W/°C
°C
N
Units
°C/W
1
03/16/07