IRGS30B60KPBF Datasheet, PDF (1/14 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR

PD - 97003
INSULATED GATE BIPOLAR TRANSISTOR
IRGB30B60KPbF
IRGS30B60KPbF
IRGSL30B60KPbF
Features
• Low VCE (on) Non Punch Through IGBT Technology
• 10µs Short Circuit Capability
• Square RBSOA
• Positive VCE (on) Temperature Coefficient
• Maximum Junction Temperature rated at 175°C
• Lead-Free
C
G
E
n-channel
V_CES = 600V
I_C = 50A, T_C=100°C
at T_J=175°C
t_sc > 10µs, T_J=150°C
V_CE(on) typ. = 1.95V
Benefits
• Benchmark Efficiency for Motor Control
• Rugged Transient Performance
• Low EMI
• Excellent Current Sharing in Parallel Operation
TO-220AB
D²Pak
TO-262
IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF
Absolute Maximum Ratings
Parameter
V_CES
Collector-to-Emitter Voltage
I_C @ T_C = 25°C Continuous Collector Current
I_C @ T_C = 100°C Continuous Collector Current
I_CM
I_LM
Pulse Collector Current (Ref.Fig.C.T.5)
™ Clamped Inductive Load current
V_ISOL
RMS Isolation Voltage, Terminal to Case, t=1 min.
V_GE
Gate-to-Emitter Voltage
P_D @ T_C = 25°C Maximum Power Dissipation
P_D @ T_C = 100°C Maximum Power Dissipation
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
600
78g
50
120
120
2500
±20
370
180
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C
Thermal / Mechanical Characteristics
Parameter
Min.
Rθ_JC
Junction-to-Case- IGBT
–––
R_θCS
Rθ_JA
R_θJA
Case-to-Sink, flat, greased surface
–––
d Junction-to-Ambient, typical socket mount
–––
eÃÃ Junction-to-Ambient (PCB Mount, Steady State)
–––
Wt
Weight
–––
Typ.
–––
0.50
–––
–––
1.44
Max.
0.41*
–––
62
40
–––
Units
°C/W
g
* R_θJC (end of life) = 0.65°C/W. This is the maximum measured value after 1000 temperature cycles from -55 to 150°C
and is accounted for by the physical wearout of the die attach medium.
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1
05/17/05