IRGS15B60KPBF_15 Datasheet, PDF (1/11 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR

PD - 96358
INSULATED GATE BIPOLAR TRANSISTOR
IRGS15B60KPbF
Features
• Low VCE (on) Non Punch Through IGBT
Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Lead-Free
C
G
E
n-channel
V_CES = 600V
I_C = 15A, T_C=100°C
t_sc > 10µs, T_J=150°C
V_CE(on) typ. = 1.8V
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
Absolute Maximum Ratings
Parameter
V_CES
Collector-to-Emitter Voltage
I_C @ T_C = 25°C Continuous Collector Current
I_C @ T_C = 100°C Continuous Collector Current
I_CM
Pulse Collector Current Vge = 15V
I_LM
f Clamped Inductive Load Current Vge = 20V
V_GE
Continuous Gate-to-Emitter Voltage
P_D @ T_C = 25°C Maximum Power Dissipation
P_D @ T_C = 100°C Maximum Power Dissipation
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Thermal Resistance
Parameter
R_θJC (IGBT)
Rθ_CS
Rθ_JA
Junction-to-Case-IGBT
Case-to-Sink (flat, greased surface)
c Junction-to-Ambient (PCB Mount steady state)
Weight
D²Pak
IRGS15B60KPbF
Max.
600
31
15
62
62
±20
208
83
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
Typ.
–––
0.5
–––
1.44
Max.
0.6
–––
40
–––
Units
°C/W
g (oz)
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1
02/22/11