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IRGS15B60KPBF Datasheet, PDF (1/11 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR | |||
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PD - 96358
INSULATED GATE BIPOLAR TRANSISTOR
IRGS15B60KPbF
Features
⢠Low VCE (on) Non Punch Through IGBT
Technology.
⢠10µs Short Circuit Capability.
⢠Square RBSOA.
⢠Positive VCE (on) Temperature Coefficient.
⢠Lead-Free
C
G
E
n-channel
VCES = 600V
IC = 15A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.8V
Benefits
⢠Benchmark Efficiency for Motor Control.
⢠Rugged Transient Performance.
⢠Low EMI.
⢠Excellent Current Sharing in Parallel Operation.
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C Continuous Collector Current
ICM
Pulse Collector Current Vge = 15V
ILM
f Clamped Inductive Load Current Vge = 20V
VGE
Continuous Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Thermal Resistance
Parameter
RθJC (IGBT)
RθCS
RθJA
Junction-to-Case-IGBT
Case-to-Sink (flat, greased surface)
c Junction-to-Ambient (PCB Mount steady state)
Weight
D2Pak
IRGS15B60KPbF
Max.
600
31
15
62
62
±20
208
83
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
Min.
âââ
âââ
âââ
âââ
Typ.
âââ
0.5
âââ
1.44
Max.
0.6
âââ
40
âââ
Units
°C/W
g (oz)
www.irf.com
1
02/22/11
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