IRGS10B60KDPBF_15 Datasheet, PDF (1/15 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

PD - 94925C
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
IRGB10B60KDPbF
IRGS10B60KDPbF
IRGSL10B60KDPbF
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10μs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Lead-Free
C
G
E
n-channel
V_CES = 600V
I_C = 19A, T_C=100°C
t_sc > 10μs, T_J=150°C
V_CE(on) typ. = 1.8V
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
Absolute Maximum Ratings
Parameter
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
I_F @ T_C = 25°C
I_F @ T_C = 100°C
I_FM
V_GE
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current „
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Thermal Resistance
TO-220AB
D²Pak
TO-262
IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF
Max.
600
35
19
44
44
35
19
44
± 20
156
62
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
R_θJC
R_θJC
R_θCS
R_θJA
R_θJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Junction-to-Ambient (PCB Mount, steady state)‚
Weight
Min.
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
–––
1.44
Max.
0.8
3.4
–––
62
40
–––
Units
°C/W
g
1
01/07/13