IRGR4045DPBF Datasheet, PDF (1/11 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
 Low V_{CE (on)} Trench IGBT Technology
 Low Switching Losses
 Maximum Junction temperature 175 °C
 5μs SCSOA
 Square RBSOA
 100% of the parts tested for I_LM
 Positive V_{CE (on)} Temperature Coefficient.
 Ultra Fast Soft Recovery Co-pak Diode
 Tighter Distribution of Parameters
 Lead-Free, RoHS Compliant
Benefits
 High Efficiency in a Wide Range of Applications
 Suitable for a Wide Range of Switching Frequencies due
to Low V_{CE (ON)} and Low Switching Losses
 Rugged Transient Performance for Increased Reliability
 Excellent Current Sharing in Parallel Operation
 Low EMI
IRGR4045DPbF
C
G
E
n-channel
V_CES = 600V
I_C  6.0A, T_C = 100°C
T_jmax = 175°C
V_{CE(on) typ.}  1.7V
G
Gate
C
E
G
D-Pak
IRGR4045DPbF
C
Colletor
E
Emitter
Absolute Maximum Ratings
Parameter
V_CES
I_C@ T_C = 25°C
I_C@ T_C = 100°C
I_CM
I_LM
I_F@T_C=25°C
I_F@T_C=100°C
I_FM
V_GE
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
c ^{Pulsed Collector Current, VGE = 15V}
Clamped Inductive Load Current, V_GE = 20V
Diode Continuous Forward Current
d ^{Diode Continuous Forward Current}
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
P_D @ T_C =25°
P_D @ T_C =100°
T_J
T_STG
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R_JC
R_JC
R_JA
e Junction-to-Case - IGBT
e Junction-to-Case - Diode
g Junction-to-Ambient (PCB Mount)
R_JA
Junction-to-Ambient
*Qualification standards can be found at http://www.irf.com/
1
Max.
600
12
6.0
18
24
8.0
4.0
24
± 20
± 30
77
39
-55 to + 175
Units
V
A
V
W
°C
300 (0.063 in. (1.6mm) from case)
Min.
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
Max.
1.9
6.8
50
110
Units
°C/W
www.irf.com
October 10, 2012