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| IRGR3B60KD2PBF Datasheet, PDF (1/14 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |||
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PD - 95036
IRGR3B60KD2PbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
⢠Low VCE (on) Non Punch Through IGBT Technology.
⢠Low Diode VF.
⢠10µs Short Circuit Capability.
⢠Square RBSOA.
⢠Ultrasoft Diode Reverse Recovery Characteristics.
⢠Positive VCE (on) Temperature Coefficient.
⢠Lead-Free
Benefits
⢠Benchmark Efficiency for Motor Control.
C
G
E
n-channel
⢠Rugged Transient Performance.
⢠Low EMI.
⢠Excellent Current Sharing in Parallel Operation.
VCES = 600V
IC = 4.2A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.9V
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C Continuous Collector Current
ICM
ILM
Pulse Collector Current (Ref.Fig.C.T.5)
c Clamped Inductive Load current
IF @ Tc = 25°C Diode Continous Forward Current
IF @ Tc = 100°C Diode Continuous Forward Current
IFM
Diode Maximum Forward Current
VGE
Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature Range, for 10 sec.
Thermal / Mechanical Characteristics
Parameter
RθJC
Junction-to-Case- IGBT
RθJC
RθJA
Junction-to-Case- Diode
d Junction-to-Ambient, (PCB Mount)
Wt
Weight
www.irf.com
D-Pak
Max.
600
7.8
4.2
15.6
15.6
6.0
3.2
15.6
±20
52
21
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
Min.
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
âââ
0.3
Max.
2.4
8.8
50
âââ
Units
°C/W
g
1
2/23/04
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