IRGPS40B120UP_15 Datasheet, PDF (1/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR

PD- 95899A
IRGPS40B120UP
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Super-247 Package.
• Lead-Free
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Significantly Less Snubber Required
• Excellent Current Sharing in Parallel Operation.
C
G
E
n-channel
UltraFast IGBT
V_CES = 1200V
V_CE(on) typ. = 3.12V
@ V_GE = 15V,
I_CE = 40A, Tj=25°C
Super-247™
Absolute Maximum Ratings
Parameter
V_CES
Collector-to-Emitter Voltage
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
V_GE
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current 
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Max.
1200
80
40
160
160
± 20
595
238
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
Thermal Resistance
R_θJC
R_θCS
R_θJA
Wt
Le
www.irf.com
Parameter
Junction-to-Case - IGBT
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
Internal Emitter Inductance (5mm from package)
Min.
–––
–––
–––
20 (2)
–––
–––
Typ.
–––
0.24
–––
–––
6.0 (0.21)
13
Max.
0.20
–––
40
–––
–––
–––
Units
°C/W
N(kgf)
g (oz)
nH
1
03/15/05