IRGPS40B120UDP Datasheet, PDF (1/12 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

PD- 95967
IRGPS40B120UDP
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
UltraFast Co-Pack IGBT
Features
C
V_CES = 1200V
• Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Super-247 Package.
• Lead-Free
G
E
N-channel
V_CE(on) typ. = 3.12V
@ V_GE = 15V,
I_CE = 40A, Tj=25°C
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Significantly Less Snubber Required
• Excellent Current Sharing in Parallel Operation.
Absolute Maximum Ratings
Parameter
V_CES
Collector-to-Emitter Voltage
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
I_F @ T_C = 25°C
I_F @ T_C = 100°C
I_FM
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
V_GE
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Super-247™
Max.
1200
80
40
160
160
80
40
160
± 20
595
238
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
Thermal Resistance
R_θJC
R_θJC
R_θCS
R_θJA
Wt
Le
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
Internal Emitter Inductance (5mm from package)
www.irf.com
Min.
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20 (2)
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Typ.
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0.24
–––
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6.0 (0.21)
13
Max.
0.20
0.83
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40
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Units
°C/W
N(kgf)
g (oz)
nH
1
11/19/04