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IRGPS4067DPBF_15 Datasheet, PDF (1/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |||
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INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
⢠Low VCE (on) Trench IGBT Technology
⢠Low Switching Losses
⢠5µs SCSOA
⢠Square RBSOA
⢠100% of The Parts Tested for ILM Â
⢠Positive VCE (on) Temperature Coefficient.
⢠Ultra Fast Soft Recovery Co-pak Diode
⢠Tighter Distribution of Parameters
⢠Lead-Free, RoHS Compliant
C
G
E
n-channel
IRGPS4067DPbF
VCES = 600V
IC(Nominal) = 120A
tSC ⥠5µs, TJ(max) = 175°C
VCE(on) typ. = 1.70V
Benefits
⢠High Efficiency in a Wide Range of Applications
⢠Suitable for a Wide Range of Switching Frequencies due
to Low VCE (ON) and Low Switching Losses
⢠Rugged Transient Performance for Increased Reliability
⢠Excellent Current Sharing in Parallel Operation
⢠Low EMI
C
E
C
G
Super-247
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
INOMINAL
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
Pulse Collector Current, VGE = 15V
c Clamped Inductive Load Current, VGE = 20V
Diode Continous Forward Current
Diode Continous Forward Current
d Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Thermal Resistance
RθJC (IGBT)
RθJC (Diode)
Parameter
f Thermal Resistance Junction-to-Case-(each IGBT)
f Thermal Resistance Junction-to-Case-(each Diode)
RθCS
Thermal Resistance, Case-to-Sink (flat, greased surface)
RθJA
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Max.
600
240g
160g
120
360
480
240
160
480
±20
±30
750
375
-55 to +175
300 (0.063 in. (1.6mm) from case)
Min.
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
0.24
âââ
Max.
0.20
0.63
âââ
40
Units
V
A
V
W
°C
Units
°C/W
1
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March 27, 2014
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