IRGPS4067DPBF Datasheet, PDF (1/10 Pages) International Rectifier – Low VCE (on) Trench IGBT Technology

PD - 97736
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
IRGPS4067DPbF
Features
 Low V_{CE (on)} Trench IGBT Technology
 Low Switching Losses
 5μs SCSOA
 Square RBSOA
 100% of The Parts Tested for I_LM 
 Positive V_{CE (on)} Temperature Coefficient.
 Ultra Fast Soft Recovery Co-pak Diode
 Tighter Distribution of Parameters
 Lead-Free, RoHS Compliant
C
G
E
n-channel
V_CES = 600V
I_C(Nominal) = 120A
t_SC 5μs, T_J(max) = 175°C
V_CE(on) typ. = 1.70V
Benefits
 High Efficiency in a Wide Range of Applications
 Suitable for a Wide Range of Switching Frequencies due
to Low V_{CE (ON)} and Low Switching Losses
 Rugged Transient Performance for Increased Reliability
 Excellent Current Sharing in Parallel Operation
 Low EMI
C
E
C
G
Super-247
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_NOMINAL
I_CM
I_LM
I_F @ T_C = 25°C
I_F @ T_C = 100°C
I_FM
V_GE
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
Pulse Collector Current, V_GE = 15V
c Clamped Inductive Load Current, V_GE = 20V
Diode Continous Forward Current
Diode Continous Forward Current
d Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Thermal Resistance
R_JC (IGBT)
R_JC (Diode)
Parameter
f Thermal Resistance Junction-to-Case-(each IGBT)
f Thermal Resistance Junction-to-Case-(each Diode)
R_CS
Thermal Resistance, Case-to-Sink (flat, greased surface)
R_JA
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Max.
600
240g
160g
120
360
480
240
160
480
±20
±30
750
375
-55 to +175
300 (0.063 in. (1.6mm) from case)
Min.
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Typ.
–––
–––
0.24
–––
Max.
0.20
0.63
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40
Units
V
A
V
W
°C
Units
°C/W
1
www.irf.com
10/18/11