IRGPC30K Datasheet, PDF (1/7 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR

PD - 9.1075
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Short circuit rated - 10µs @ 125°C, VGE = 15V
• Switching-loss rating includes all "tail" losses
• Optimized for high operating frequency (over
5kHz) See Fig. 1 for Current vs. Frequency curve
C
G
E
n-channel
IRGPC30K
Short Circuit Rated
UltraFast IGBT
V_CES = 600V
V_CE(sat) ≤ 3.8V
@V_GE = 15V, I_C = 14A
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.
Absolute Maximum Ratings
TO -2 47 AC
V_CES
IC @ TC = 25°C
IC @ TC = 100°C
I_CM
ILM
t_sc
VGE
EARV
P_D @ T_C = 25°C
PD @ TC = 100°C
T_J
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600
23
14
46
46
10
±20
10
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
µs
V
mJ
W
°C
Thermal Resistance
RθJC
R_θCS
R_θJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
—
—
—
—
Typ.
—
0.24
—
6 (0.21)
Max.
1.2
—
40
—
Units
°C/W
g (oz)