IRGP6660DPBF_15 Datasheet, PDF (1/13 Pages) International Rectifier – Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

V_CES = 600V
I_C = 60A, T_C =100°C
t_SC ≥ 5µs, T_J(max) = 175°C
V_CE(ON) typ. = 1.7V @ IC = 48A
Applications
• Welding
• H Bridge Converters
IRGP6660DPbF
IRGP6660D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
C
C
G
E
n-channel
G
Gate
GCE
IRGP6660DPbF
TO-247AC
C
Collector
E
GC
IRGP6660D-EPbF
TO-247AD
E
Emitter
Features
Low V_CE(ON) and switching losses
Optimized diode for full bridge hard switch converters
Square RBSOA and maximum junction temperature 175°C
5µs short circuit SOA
Positive V_{CE (ON)} temperature coefficient
Lead-free, RoHS compliant
Benefits
High efficiency in a wide range of applications
Optimized for welding and H bridge converters
Improved reliability due to rugged hard switching
performance and higher power capability
Enables short circuit protection scheme
Excellent current sharing in parallel operation
Environmentally friendly
Base part number
IRGP6660DPBF
IRGP6660D-EPBF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRGP6660DPBF
IRGP6660D-EPBF
Absolute Maximum Ratings
Parameter
Max.
V_CES
Collector-to-Emitter Voltage
600
I_C @ T_C = 25°C
Continuous Collector Current
95
I_C @ T_C = 100°C Continuous Collector Current
60
I_CM
Pulse Collector Current, V_GE = 15V
144
I_LM
Clamped Inductive Load Current, V_GE = 20V 
192
I_FRM @ T_C = 100°C Diode Repetitive Peak Forward Current
30
I_FM
Diode Maximum Forward Current 
192
V_GE
Continuous Gate-to-Emitter Voltage
±20
P_D @ T_C = 25°C Maximum Power Dissipation
330
P_D @ T_C = 100°C Maximum Power Dissipation
167
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 sec.
-40 to +175
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min. Typ.
Max.
R_θJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) 
–––
–––
0.45
R_θJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) 
–––
–––
3.35
R_θCS
Thermal Resistance, Case-to-Sink (flat, greased surface)
––– 0.24
–––
R_θJA
Thermal Resistance, Junction-to-Ambient (typical socket mount) –––
–––
40
Units
V
A
V
W
C
Units
°C/W
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November 14, 2014