IRGP50B60PD Datasheet, PDF (1/10 Pages) International Rectifier – SMPS IGBT

PD - 94624B
SMPS IGBT
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
Applications
• Telecom and Server SMPS
• PFC and ZVS SMPS Circuits
• Uninterruptable Power Supplies
• Consumer Electronics Power Supplies
Features
• NPT Technology, Positive Temperature Coefficient
• Lower V_CE(SAT)
• Lower Parasitic Capacitances
• Minimal Tail Current
• HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
• Tighter Distribution of Parameters
• Higher Reliability
Benefits
• Parallel Operation for Higher Current Applications
• Lower Conduction Losses and Switching Losses
• Higher Switching Frequency up to 150kHz
C
G
E
n-channel
IRGP50B60PD
V_CES = 600V
V_CE(on) typ. = 2.00V
@ V_GE = 15V I_C = 33A
Equivalent MOSFET
Parameters
R_CE(on) typ. = 61mΩ
I_D (FET equivalent) = 50A
E
C
G
TO-247AC
Absolute Maximum Ratings
Parameter
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
I_F @ T_C = 25°C
I_F @ T_C = 100°C
I_FRM
V_GE
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref. Fig. C.T.4)
d Clamped Inductive Load Current
Diode Continous Forward Current
Diode Continous Forward Current
e Maximum Repetitive Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
R_θJC (IGBT)
Thermal Resistance Junction-to-Case-(each IGBT)
R_θJC (Diode)
Thermal Resistance Junction-to-Case-(each Diode)
R_θCS
Thermal Resistance, Case-to-Sink (flat, greased surface)
R_θJA
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Weight
1
Max.
600
75
42
150
150
50
25
100
±20
370
150
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6.0 (0.21)
Max.
0.34
0.64
–––
40
–––
Units
V
A
V
W
°C
Units
°C/W
g (oz)
www.irf.com
07/02/07