IRGP4790DPBF_15 Datasheet, PDF (1/12 Pages) International Rectifier – Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

IRGP4790DPbF
IRGP4790D-EPbF
V_CES = 650V
I_C = 90A, T_C =100°C
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
t_SC 5.5µs, T_J(max) = 175°C
V_CE(ON) typ. = 1.7V @ IC = 75A
Applications
 Industrial Motor Drive
 UPS
 Solar Inverters
 Welding
Features
Low V_CE(ON) and Switching Losses
5.5µs Short Circuit SOA
Square RBSOA
Maximum Junction Temperature 175°C
Positive V_{CE (ON)} Temperature Coefficient
Lead-Free, RoHs compliant
G
E
n-channel
G
Gate
E
GC
IRGP4790DPbF
TO‐247AC
C
Collector
E
GC
IRGP4790D‐EPbF
TO‐247AD
E
Emitter
Benefits
High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Increased Reliability
Excellent Current Sharing in Parallel Operation
Environmentally friendly
Base part number
IRGP4790DPbF
IRGP4790D-EPbF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRGP4790DPbF
IRGP4790D-EPbF
Absolute Maximum Ratings
Parameter
Max.
Units
V_CES
Collector-to-Emitter Voltage
650
V
I_C @ T_C = 25°C
Continuous Collector Current
140
I_C @ T_C = 100°C Continuous Collector Current
90
I_CM
Pulse Collector Current, V_GE = 15V
225
I_LM
Clamped Inductive Load Current, V_GE = 20V 
300
A
I_F @ T_C = 25°C
Diode Continuous Forward Current
65
I_F @ T_C = 100°C Diode Continuous Forward Current
40
I_FM
Diode Maximum Forward Current 
300
V_GE
Continuous Gate-to-Emitter Voltage
±20
V
P_D @ T_C = 25°C Maximum Power Dissipation
P_D @ T_C = 100°C Maximum Power Dissipation
455
230
W
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 sec.
-40 to +175
300 (0.063 in. (1.6mm) from case)
C
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
R_JC (IGBT)
R_JC (Diode)
R_CS
R_JA
Thermal Resistance Junction-to-Case-(each IGBT) 
Thermal Resistance Junction-to-Case-(each Diode) 
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.33
1.1
–––
40
Units
°C/W
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November 12, 2014