IRGP4760PBF_15 Datasheet, PDF (1/11 Pages) International Rectifier – Insulated Gate Bipolar Transistor

V_CES = 650V
I_C = 60A, T_C =100°C
t_SC 5.5µs, T_J(max) = 175°C
V_CE(ON) typ. = 1.7V @ IC = 48A
Applications
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding
Features
Low V_CE(ON) and Switching Losses
5.5µs Short Circuit SOA
Square RBSOA
Maximum Junction Temperature 175°C
Positive V_{CE (ON)} Temperature Coefficient
Lead-Free, RoHs compliant
IRGP4760PbF
IRGP4760-EPbF
Insulated Gate Bipolar Transistor
C
G
E
n-channel
G
Gate
E
GC
IRGP4760PbF
TO‐247AC
C
Collector
E
GC
IRGP4760‐EPbF
TO‐247AD
E
Emitter
Benefits
High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Increased Reliability
Excellent Current Sharing in Parallel Operation
Environmentally friendly
Base part number
IRGP4760PbF
IRGP4760-EPbF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRGP4760PbF
IRGP4760-EPbF
Absolute Maximum Ratings
V_CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_LM
V_GE
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_STG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, V_GE=15V
Clamped Inductive Load Current, V_GE=20V 
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
650
90
60
144
192
±20
325
160
-40 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
C
Thermal Resistance
Parameter
R_JC
R_CS
R_JA
Thermal Resistance Junction-to-Case 
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
Typ.
–––
0.24
40
Max.
0.46
–––
–––
Units
°C/W
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August 22, 2014